vishay general semiconductor gf1a thru gf1m document number 88617 26-jun-06 www.vishay.com 1 surface mount glass passivated rectifier features ? superectifier struct ure for high reliability condition ? patented glass-plastic encapsulation technique ? ideal for automated placement ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets environmental standard mil-s-19500 ? meets msl level 1, per j-std-020c, lf max peak of 250 c ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in general purpose rectification of power supplies, inverters, converters and free- wheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ba, molded epoxy over glass body epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end patented* ? do-214ba (gf1) * glass-plastic encapsulation technique is covered by patent no. 3,996,602, brazed-lead assembly by patent no. 3,930,306 and lead forming by patent no. 5,151,846 major ratings and characteristics i f(av) 1.0 a v rrm 50 v to 1000 v i fsm 30 a v f 1.1 v, 1.2 v i r 5.0 a t j max. 175 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit device marking code ga gb gd gg gj gk gm maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current at t l = 125 c i f(av) 1.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 30 a operating junction and storage temperature range t j , t stg - 65 to + 175 c
www.vishay.com 2 document number 88617 26-jun-06 vishay general semiconductor gf1a thru gf1m note: (1) thermal resistance from junction to ambi ent and from junction to lead, p.c.b. mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper p ad areas ratings and characteristics curves (t a = 25 c unless otherwise noted) electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit maximum instantaneous forward voltage at 1.0 a v f 1.1 1.2 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 50 a typical reverse recovery time at i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 3.0 s typical junction capacitance at 4.0 v, 1 mhz c j 15 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gf1a gf1b gf1d gf1g gf1j gf1k gf1m unit typical thermal resistance (1) r ja r jl 80 26 c/w ordering information preferred p/n unit weight (g) referred package code base quantity delivery mode gf1j-e3/67a 0.104 67a 1500 7" diameter plastic tape & reel gf1j-e3/5ca 0.104 5ca 6500 13" diameter plastic tape & reel figure 1. forward current derating curve 0 100 130 110 120 140 150 160 175 0.5 1.0 60 hz resisti v e or ind u cti v e load p.c.b. mo u nted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas lead temperat u re (c) a v erage for w ard rectified c u rrent (a) figure 2. maximum non-repetitive peak forward surge current 0 15 20 25 10 5 30 1 100 10 t j = t j max. 8 .3 ms single half sine- w a v e nu m b er of cycles at 60 hz peak for w ard s u rg e c u rr ent (a)
document number 88617 26-jun-06 www.vishay.com 3 gf1a thru gf1m vishay general semiconductor package outline dimensions in inches (millimeters) figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics 10 1 0.1 0.01 0.4 0.6 1.4 1.6 0. 8 1.0 1.2 p u lse w idth = 300 s 1 % d u ty cycle t j = 25 c instantaneo u s for w ard v oltage ( v ) instan taneo u s for w ard c u rrent (a) 0.1 1 10 0.01 20 0 100 40 60 8 0 t j = 25 c t j = 100 c percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent (ma) figure 5. typical junction capacitance figure 6. typical transient thermal impedance 1 100 10 30 1 10 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capacitance (pf) 0.01 100 10 100 0.1 0.1 1 10 1 mo u nted on 0.2 x 0.27" (5.0 x 7.0 mm) copper pad areas transient thermal impedan ce (c/ w ) t - p u lse d u ration (s) 0.167 (4.24) 0.1 8 7 (4.75) 0.0065 (0.17) 0.015 (0.3 8 ) 0.030 (0.76) 0.060 (1.52) 0.196 (4.9 8 ) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.11 8 (3.00) 0.040 (1.02) 0.066 (1.6 8 ) 0.09 8 (2.49) 0.10 8 (2.74) 0.006 (0.152) typ. do-214ba (gf1) 0.076 max. (1.93 max.) 0.220 (5.5 8 )ref 0.060 mi n . (1.52 mi n .) mountin g pad layout cathode band 0.066 mi n . (1.6 8 mi n .)
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